澳门·永利(8858cc-股份VIP认证)-Made in China

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N60V SGT MOSFET
N60V SGT MOSFET Back
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Introduction 1、DFN3333-8L 、PDFN5060-8L、TOLLand other packages，It is more suitable for compact design；
2、It has the characteristics of strong overcurrent capability, low thermal resistance, and wider range of SOA;
3、Suitable for applications such as motor drive /BMS/ mobile energy storage;
4、Specially designed for body diodes, it has better EMI characteristics.
Features
SPECIFICATION

YJG80G06B YJG85G06B YJG85G06H YJG95G06B YJG140G06A YJG210G06AR YJQ70G06A YJT220G06H YJT300G06H

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